By David K. Ferry
This publication used to be derived from a conversation the writer gave on the overseas convention on complex Nanodevices and Nanotechnology in Hawaii. The booklet offers the author's own perspectives approximately technology, engineering, and lifestyles, illustrated by way of a couple of tales approximately a variety of occasions, a few of that have formed the author's existence.
This e-book was once derived from a conversation the writer gave on the overseas convention on complex Nanodevices and Nanotechnology in Hawaii. The publication provides the author's own perspectives approximately technological know-how, engineering, and existence, illustrated via a few tales approximately a number of occasions, a few of that have formed the author's lifestyles.
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Extra info for 50 Years in the Semiconductor Underground
The transistors are placed like our blocks and houses. Hence, if I reduce the size of the edge of a block (be it a transistor or a city block) by a factor of 2 in each direction, the area is reduced by a factor of 4. Moore observed that this occurred every 3 years, so that the factor of 2 occurred in half this time, or 18 months. In Moore’s original view, the law was driven by three primary factors: (1) reducing the transistor size and therefore the semiconductor real estate upon which it was situated, (2) increasing the size of the small integrated chip itself, and (3) circuit cleverness by which the number of transistors needed to create a function could be reduced over time; hence the number of functional units that appeared on a chip could be increased.
This certainly would not have been unusual. The specifications for the navigation system apparently were not detailed enough to prevent an unintended consequence from occurring. What we found in our analysis was that one of the modes of the aircraft had a frequency very close to that of the rubber shock absorbers with which the navigation system was mounted. As a result, the excitation of that vibrational mode would be resonantly transmitted right through the shock mounts and into the navigational system undamped.
Here, the transistor is no longer planar, but is largely vertical, placed on the sides and top of a vertical fin (like a shark’s fin, sticking up out of the body). With this new topology, shrinking critical length (the gate length) to 22 nm could be achieved while still using less horizontal silicon real estate. Nevertheless, this 22 nm is only about 100 times the spacing between individual silicon atoms. Clearly, this evolution cannot continue down this path much longer. * While the tri-gate has been one such revolution, the limit to gate length implied above puts more pressure upon the third factor to continue to grow the power of integrated circuits.
50 Years in the Semiconductor Underground by David K. Ferry